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TPCA8014-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TENTATIVE
TPCA8014-H
Unit: mm
0.50.1 8 1.27 0.40.1 5 0.05 M A
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
6.00.3
5.00.2
* * * * * * *
Small footprint due to small and thin package High speed switching Small gate charge: Qsw = 7.4 nC (typ.) Low drain-source ON resistance: R DS (ON) = 10.5 mO (typ.) High forward transfer admittance: |Yfs| = TBD S (typ.) Low leakage current: IDSS = 10 A (max) (V DS = 40 V) Enhancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA)
0.150.05
1 5.00.2 0.950.05
4
0.595 A 0.1660.05
S 1
0.05 S 4 1.10.2
0.60.1
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD PD Rating 40 40 20 30 90 45 2.8 W W Unit V V V A
4.250.2
8
5
1,2,3*F SOURCE 5,6,7,8*F DRAIN
0.80.1
JEDEC JEITA TOSHIBA
? ? 2-5Q1A
Pulsed (Note 1) Drain power dissipation (Tc=25*Z ) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25*Z (Note 4) ) Channel temperature Storage temperature range
Weight: 0.080 g (typ.)
Circuit Configuration
PD 1.6 W
8 7 6 5
EA S IAR EAR Tch Tstg
84 30 TBD 150 -55 to 150
mJ A mJ C C
1
2
3
3.50.2
4*F GATE
4
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
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TPCA8014-H
Thermal Characteristics
Characteristics Thermal resistance, channel to case (Tc=25*Z ) Thermal resistance, channel to ambient (t = 10 s) (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit C/W
Rth (ch-a)
44.6
C/W
Thermal resistance, channel to ambient (Note 2b)
Rth (ch-a)
78.1
C/W
Marking (Note 5)
TPCA 8014-H *|
Type Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.1 mH, R G = 25 , IAR = 30 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Gate swich charge t tf toff Qg Qgs1 Qgd QSW V DD 32 V, V GS = 10 V , ID = 30 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX V th RDS (ON) |Yf s | Ciss Crss Coss Rg tr ton 10 V V GS 0V 4.7 ID = 15 A V OUT RL =1.33 V DS = 10 V , V GS = 0 V , f = 1 MHz Test Condition V GS = 16 V, V DS = 0 V V DS = 40 V, V GS = 0 V ID = 10 mA, V GS = 0 V ID = 10 mA, V GS = -20 V V DS = 10 V, ID = 1 mA V GS = 10 V , ID = 15 A V GS = 4.5 V , ID = 15 A V DS = 10 V , ID = 15 A Min 40 25 1.1 TBD Typ. 7.0 10.5 TBD 1365 110 500 1.0 5 11 3 18 22 12 5.1 4.9 7.4 Max 10 10 2.3 9.5 15 ns nC pF S Unit A A V V m
V DD 20 V - < 1%, tw = 10 s Duty = V DD 32 V, V GS = 10 V , ID = 30 A - V DD 32 V, V GS = 5 V , ID = 30 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP V DSF Test Condition IDR = 30 A, V GS = 0 V Min Typ. Max 90 -1.2 Unit A V
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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